SIHG20N50C MOS N 500V 20A 0.27R 250W TO-247

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 65 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 250 mW
Channel Mode: Enhancement
Packaging: Tube
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 44 ns
Forward Transconductance - Min: 6.4 S
Height: 20.82 mm
Length: 15.87 mm
Product Type: MOSFET
Rise Time: 27 ns
500
Subcategory: MOSFETs