HY4306P MOS N 150V 120A 12mR 300W TO-3PS-3L/TO-247

Type Designator: HY3215PS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 480 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 137nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO-3PS-3L