MOS N 80A 75V 11mR 300W
FEATURES
* RDS(ON) = 9.5m? @VGS = 10 V(Typical)
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 240 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.
FEATURES
* RDS(ON) = 9.5m? @VGS = 10 V(Typical)
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability
* Low reverse transfer Capacitance (CRSS= typical 240 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M-SQ pkg is well suited for
adaptor power units,amplifiers,inverters and SMPS application.