Product Description Product Features
13A, 500V, RDS(on) = 0.48O @VGS = 10 V
Low charge, low reverse transfer capacitance
Fast switching
13N50 is N-channel enhanced high voltage power MOS field effect
Should be managed. This product is ideal for high frequency switching
Source, corrected power factor and half-bridge based electronic ballast.
13A, 500V, RDS(on) = 0.48O @VGS = 10 V
Low charge, low reverse transfer capacitance
Fast switching
13N50 is N-channel enhanced high voltage power MOS field effect
Should be managed. This product is ideal for high frequency switching
Source, corrected power factor and half-bridge based electronic ballast.