TK100E08N1 MOS N 80V 214A 2.6mR 255W TO-220

MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A

Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 214 A
Rds On - Drain-Source Resistance: 3.2 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 130 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 255 W
Channel Mode: Enhancement
Tradename: U-MOSVIII-H
Series: TK100E08N1
Packaging: Tube
Brand: Toshiba
Configuration: Single
Height: 15.1 mm
Length: 10.16 mm
Product Type: MOSFET
50
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.45 mm
Unit Weight: 2 g