IRL2505PBF MOS N 55V 104A 8mR 200W TO-220-AB Level Logic Gate Drive

MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 104 A
Rds On - Drain-Source Resistance: 8 mOhms
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 86.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Product Type: MOSFET
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Unit Weight: 0.211644 oz