IRLD024 MOS-N 60V 2.5A 4-DIP

MOSFET N-CH 60V 2.5A 4-DIP

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: HVMDIP-4
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 1.8 A
Rds On - Drain-Source Resistance: 100 mOhms
Vgs th - Gate-Source Threshold Voltage: 1 V
Vgs - Gate-Source Voltage: 5 V
Qg - Gate Charge: 18 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 1.3 W
Channel Mode: Enhancement
Packaging: Tube
Height: 3.37 mm
Length: 6.29 mm
Transistor Type: 1 N-Channel
Width: 5 mm
Brand: Vishay / Siliconix
Forward Transconductance - Min: 3.7 S
Fall Time: 41 ns
Product Type: MOSFET
Rise Time: 110 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 11 ns