SPW55N80C3 MOS N 800V 54.9A 0.085R 500W TO-247

MOSFET N-CH 800V 54.9A 0.085R 500W

Manufacturer:Infineon
Product Category:MOSFET
RoHS: Details
Technology:Si
Mounting Style:Through Hole
Package / Case:TO-247-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:800 V
Id - Continuous Drain Current:54.9 A
Rds On - Drain-Source Resistance:77 mOhms
Vgs - Gate-Source Voltage:20 V
Vgs th - Gate-Source Threshold Voltage:2.1 V
Qg - Gate Charge:288 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:500 W
Configuration:Single
Channel Mode:Enhancement
Packaging:Tube
Height:21.1 mm
Length:16.13 mm
Series:XPW55N80
Transistor Type:1 N-Channel
Width:5.21 mm
Brand:Infineon Technologies
Fall Time:9 ns
Product Type:MOSFET
Rise Time:21 ns
Factory Pack Quantity:240
Subcategory:MOSFETs
Typical Turn-Off Delay Time:200 ns
Typical Turn-On Delay Time:45 ns