HGTP5N120BND IGBT W/D 21A 1200V 167W TO-220

IGBT Transistors 21a 1200V IGBT NPT Series N-Ch

Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-220-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.45 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 21 A
Pd - Power Dissipation: 167 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: HGTP5N120BND
Packaging: Tube
Continuous Collector Current Ic Max: 21 A
Height: 9.4 mm
Length: 10.67 mm
Width: 4.83 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 21 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 800
Subcategory: IGBTs
Part # Aliases: HGTP5N120BND_NL
Unit Weight: 0.063493 oz