GT30F124 IGBT 200A 300V 25W TO-220F

IGBT 25W 300V 120A TO220F Transistor

VCES / Icp @3us : 300V / 200A
VCE(sat) (V) Typ. @120 A : 2.3V

Features
Fast Switching
Low collector-emitter saturation voltage even in the large current area
Built-in diode with optimal characteristics tailored to specific applications
High input impedance allows voltage drives
Available in a variety of packages
Specifications
Application

Plasma Display Panel
Additional Information
Polarity N-Channel