HGTG10N120BND IGBT W/D 35A 1200V 290W TO-247

Manufacturer: Fairchild Semiconductor
Product Category: IGBT Transistors
RoHS: RoHS Compliant By Exemption Details
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.45 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 17 A
Gate-Emitter Leakage Current: +/- 250 nA
Pd - Power Dissipation: 298 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Maximum Operating Temperature: + 150 C
Packaging: Tube
Brand: Fairchild Semiconductor
Continuous Collector Current Ic Max: 35 A
Minimum Operating Temperature: - 55 C
Part # Aliases: HGTG10N120BND_NL
Unit Weight: 0.225401 oz