HGTP12N60C3D IGBT W/D 24A 600V 104W TO-220

IGBT SMPS N-CH 600V 24A 104W TO-220AB

Type Designator: HGTP12N60C3D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 104W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.65V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 24A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 28

Maximum collector capacity (Cc), pF:

Package: TO220AB