BSM100GB120DN2K IGBT DUAL 145A 1200V

EUPEC Technologies IGBT Modules 1200V 145A DUAL 700W

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: N
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 145 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package / Case: Half Bridge1
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 30.5 mm
Length: 94 mm
Technology: Si
Width: 34 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules