IGBT Modules 1200V 15A PIM
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 35 A
Gate-Emitter Leakage Current: 300 nA
Pd - Power Dissipation: 180 W
Package / Case: EconoPIM2
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 45 mm
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 35 A
Gate-Emitter Leakage Current: 300 nA
Pd - Power Dissipation: 180 W
Package / Case: EconoPIM2
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 45 mm