BSM35GP120 IGBT Module 35A 1200V

IGBT Modules 1200V 35A PIM

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: N
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 45 A
Gate-Emitter Leakage Current: 300 nA
Pd - Power Dissipation: 230 W
Package / Case: EconoPIM2
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Height: 17 mm
Length: 107.5 mm
Technology: Si
Width: 45 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V