STGWA60H65DFB IGBT W/D 60A 650V 375W TO-247

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 80 A
Pd - Power Dissipation: 375 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: STGWA60H65DFB
Packaging: Tube
Brand: STMicroelectronics
Continuous Collector Current: 80 A
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Height: 5.15 mm
Length: 20.15 mm
Operating Temperature Range: - 55 C to + 175 C
Product Type: IGBT Transistors
600
Subcategory: IGBTs
Width: 15.75 mm
Unit Weight: 38 g