STGWA80H65DFB IGBT W/D 120A 650V 469W TO-247

IGBT Transistors PTD IGBT & IPM

Manufacturer: STMicroelectronics
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 2 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 120 A
Pd - Power Dissipation: 469 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: STGWA80H65DFB
Brand: STMicroelectronics
Continuous Collector Current: 120 A
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Height: 5.3 mm
Length: 20.3 mm
Operating Temperature Range: - 55 C to + 175 C
Product Type: IGBT Transistors
600
Subcategory: IGBTs
Width: 15.9 mm
Unit Weight: 1.340411 oz