GT80J101 IGBT 80A 600V 200W TO-264

IGBT_80A_600V_200WTO264

Type Designator: GT80J101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V: 15V

Maximum collector current |Ic|, A: 80A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 350

Maximum collector capacity (Cc), pF:

Package: TO264