IGBT Modules N-CH 1.2KV 75A
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: 6-Pack
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 75 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 280 W
Package/Case: Econo 2
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: Trenchstop IGBT3 - T3
10
Subcategory: IGBTs
Technology: Si
Tradename: TRENCHSTOP EconoPACK
Width: 45 mm
Part # Aliases: SP000100444 FS50R12KT3BOSA1
Unit Weight: 180 g
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: 6-Pack
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 75 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 280 W
Package/Case: Econo 2
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
Series: Trenchstop IGBT3 - T3
10
Subcategory: IGBTs
Technology: Si
Tradename: TRENCHSTOP EconoPACK
Width: 45 mm
Part # Aliases: SP000100444 FS50R12KT3BOSA1
Unit Weight: 180 g