BSM25GD120DN2E3224 IGBT Module 25A 1200V

IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS: Details
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:35 A
Gate-Emitter Leakage Current:180 nA
Pd - Power Dissipation:200 W
Package / Case:EconoPACK 2
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Height:17 mm
Length:107.5 mm
Technology:Si
Width:45 mm
Brand:Infineon Technologies
Mounting Style:Chassis Mount
Maximum Gate Emitter Voltage:20 V
Product Type:IGBT Modules