BSM25GP120 IGBT Module 25A 1200V

IGBT Modules 1200V 25A PIM

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Array 7
Collector- Emitter Voltage VCEO Max: 1600 V
Collector-Emitter Saturation Voltage: 2.55 V
Continuous Collector Current at 25 C: 45 A
Gate-Emitter Leakage Current: 300 nA
Pd - Power Dissipation: 230 W
Package / Case: EconoPIM2
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Height: 17 mm
Length: 107.5 mm
Technology: Si
Width: 45 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Part # Aliases: SP000095940 BSM25GP120BOSA1
Unit Weight: 6.349313 oz