BSM50GD120DN2 IGBT Module 50A 1200V

IGBT Modules 1200V 50A FL BRIDGE

50 Amp, 1200 Volt EUPEC IGBT SERIES MODULE

3-PHASE FULL-BRIDGE,INCLUDING FREE-WHEEL DIODES
PACKAGE WITH INSULATED METAL BASE PLATE.


Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 72 A
Gate-Emitter Leakage Current: 200 nA
Pd - Power Dissipation: 350 W
Package / Case: EconoPACK 2A
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: Infineon Technologies
Height: 17 mm
Length: 107.5 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount
Product Type: IGBT Modules
10
Subcategory: IGBTs
Technology: Si
Width: 45 mm
Part # Aliases: SP000100359 BSM50GD120DN2BOSA1
Unit Weight: 8.822900 oz