BSM75GD120DN2 IGBT Module 75A 1200V

IGBT Modules 1200V 75A 3-PHASE


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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 103 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 520 W
Package / Case: EconoPACK 3A
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 17 mm
Length: 122 mm
Technology: Si
Width: 62 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Part # Aliases: SP000100364 BSM75GD120DN2BOSA1
Unit Weight: 13 oz