SKM100GB124D IGBT DUAL 100A 1200V

SKM100GB124D
Half Bridge IGBT Power Module - With inverse diodes.
Semikron
Bridges,IGBTs,Transistors,Power Modules,Diodes
Circuits Per Package=1
V(BR)CES (V)=1.2k
V(BR)GES (V)=20
I(C) Abs.(A) Collector Current=150
Absolute Max. Power Diss. (W)=700
I(CES) Min. (A)=1.5m
@V(CES) (V) (Test Condition)=1.2k
I(GES) Max. (A)=300n
@V(GES) (V) (Test Condition)=20
V(CE)sat Max.(V)=2.85
@I(C) (A) (Test Condition)=75
@V(GE) (Test Condition)=15
V(GE)th Max. (V)=6.5
@I(C) (A) (Test Condition)=2.0m
td(on) Max (s) On time delay=80n
t(r) Max. (s) Rise time=45n