IXFB38N100Q2 MOS N 38A 1000V 250mR 890W PLUS-264

HiPerFETTM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
, Low Intrinsic RG
High dV/dt, Low trr
Features
z Double metal process for low gate
resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching z DC choppers
z Pulse generation
z Laser drivers
Advantages
z PLUS 264TM package for clip or spring
mounting z Space savings
z High power density
IXFB38N100Q2 VDSS = 1000V
I
D25 = 38A
RDS(on) = 250mO
t
rr
= 300ns