IXTQ88N28T MOS N 86A 280V 44mR 625W TO-247

Power MOSFET 86A 280V 625W

Type Designator: IXTQ88N28T

Type of IXTQ88N28T transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 625

Maximum drain-source voltage |Uds|, V: 280

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 86

Maximum junction temperature (Tj), °C:

Rise Time of IXTQ88N28T transistor (tr), nS: 200

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.037

Package: TO3P