IXBH16N170 BIMOS W/D 40A 1700V 250W TO-247AD

High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor

Manufacturer: IXYS
Product Category: IGBT Transistors
RoHS: RoHS Compliant Details
Brand: IXYS
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1700 V
Maximum Gate Emitter Voltage: 20 V
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package / Case: TO-247AD-3
Maximum Operating Temperature: + 150 C
Packaging: Tube
Continuous Collector Current Ic Max: 25 A
Minimum Operating Temperature: - 55 C
Series: IXBH16N170
Tradename: BIMOSFET
Unit Weight: 0.229281 oz