NPN Silicon RF Transistor
Type Designator: BF198
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 0.4
Forward current transfer ratio (hFE), min: 27
Noise Figure, dB: -
Package of BF198 transistor: X09
Type Designator: BF198
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.25
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 4
Maximum collector current |Ic max|, A: 0.025
Maksimalna temperatura (Tj), °C: 125
Transition frequency (ft), MHz: 200
Collector capacitance (Cc), pF: 0.4
Forward current transfer ratio (hFE), min: 27
Noise Figure, dB: -
Package of BF198 transistor: X09