IRFD123PBF MOS N 1.3A 100V 0.27R DIP-04

MOSFET N-CH 100V 1.3A

Product Category: MOSFET
RoHS: RoHS Compliant By Exemption Details
Brand: Vishay Semiconductors
Mounting Style: Through Hole
Package / Case: HVMDIP-4
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 600 mA
Rds On - Drain-Source Resistance: 270 Ohms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single Dual Drain
Fall Time: 17 ns
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 1 W
Rise Time: 17 ns
Factory Pack Quantity: 2500
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 8.2 ns