G25H1203/IGW25N120H3 IGBT 50A 600V 326W TO-247

IGBT Trench Field Stop 1200V 50A 326W

Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.05 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 50 A
Pd - Power Dissipation: 326 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: HighSpeed 3
Packaging: Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 600 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IGW25N12H3XK SP000674424 IGW25N120H3FKSA1
Unit Weight: 1.340411 oz