GT60N321 IGBT W/D 60A 1000V 170W TO-264

Manufacturer: Toshiba
Product Category: IGBT Transistors
RoHS: RoHS Compliant Details
Brand: Toshiba
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1000 V
Maximum Gate Emitter Voltage: +/- 25 V
Mounting Style: Through Hole
Package / Case: TO-3P
Maximum Operating Temperature: + 150 C
Continuous Collector Current Ic Max: 60 A
Minimum Operating Temperature: - 55 C
Unit Weight: 0.238311 oz