IGBT_W/D_31A_600V_ 200WTO220
Type Designator: IRGB15B60KD
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 139W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.2V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 31A
Maximum junction temperature (Tj), °C:
Rise time, nS:
Maximum collector capacity (Cc), pF:
Package: TO220AB
Type Designator: IRGB15B60KD
Type of IGBT channel: N-Channel
Maximum power dissipation (Pc) of IGBT transistor, W: 139W
Maximum collector-emitter voltage |Uce|, V: 600V
Collector-emitter saturation voltage |Ucesat|, V: 2.2V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 31A
Maximum junction temperature (Tj), °C:
Rise time, nS:
Maximum collector capacity (Cc), pF:
Package: TO220AB