IRG4PH50UD IGBT W/D 45A 1200V 200W TO-247AC

IGBT_W/D_45A_1200V_TO247AC

Type Designator: IRG4PH50UD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 24A

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247AC