2N2646 UJT P 30V 50mA 300mW TO-18

Silicon PN Unijuction Transistor
Unijunction (UJT) Transistor, 2 A, 1 µA, 6 mA, TO-18, 3 Pin, 125 °C

2N2646 Unijunction Transistor TO-18 Package

Description: The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

Features: Low Peak Point Current: 5?A (Max) Low Emitter Reverse Current: .005?A (Typ) Passivated Surface for Reliability & Uniformity

Absolute Maximum Ratings: (TA = +25?C unless otherwise specified) Power Dissipation (Note 1), PD 300mW ................................................... RMS Emitter Current, IE(RMS) 50mA ...................................................... Peak Pulse Emitter Current (Note 2), iE 2A ................................................ Emitter Reverse Voltage, VB2E 30V ....................................................... Interbase Voltage, VB2B1 35V ............................................................ Operating Junction Temperature Range, TJ -65? to 125?C ................................... Storage Temperature Range, Tstg -65? to +150?C .......................................... Note1Derate 3mW/?C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. Note2 Capacitor discharge - 10?F or less, 30 volts or less