SSH6N80AS MOS N 800V 6A 2R 200W TO-3P

Type Designator: SSH6N80AS

Type of SSH6N80AS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 150

Rise Time of SSH6N80AS transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 2

Package: TO3P