Type Designator: MJE13006
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 600
Maximum collector-emitter voltage |Uce|, V: 300
Maximum emitter-base voltage |Ueb|, V: 9
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 110
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of MJE13006 transistor: TO220
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 80
Maximum collector-base voltage |Ucb|, V: 600
Maximum collector-emitter voltage |Uce|, V: 300
Maximum emitter-base voltage |Ueb|, V: 9
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz: 4
Collector capacitance (Cc), pF: 110
Forward current transfer ratio (hFE), min: 8
Noise Figure, dB: -
Package of MJE13006 transistor: TO220