Product Category: Bipolar Transistors - BJT
RoHS: N
Mounting Style: Through Hole
Package/Case: TO-204-2
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 400 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.4 V
Maximum DC Collector Current: 16 A
Pd - Power Dissipation: 250 W
Gain Bandwidth Product fT: 4 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: onsemi
Continuous Collector Current: 16 A
DC Collector/Base Gain hFE Min: 15
Height: 8.51 mm
Length: 39.37 mm
Product Type: BJTs - Bipolar Transistors
100
Subcategory: Transistors
Technology: Si
Width: 26.67 mm
Unit Weight: 1,600 g
RoHS: N
Mounting Style: Through Hole
Package/Case: TO-204-2
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 250 V
Collector- Base Voltage VCBO: 400 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.4 V
Maximum DC Collector Current: 16 A
Pd - Power Dissipation: 250 W
Gain Bandwidth Product fT: 4 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Brand: onsemi
Continuous Collector Current: 16 A
DC Collector/Base Gain hFE Min: 15
Height: 8.51 mm
Length: 39.37 mm
Product Type: BJTs - Bipolar Transistors
100
Subcategory: Transistors
Technology: Si
Width: 26.67 mm
Unit Weight: 1,600 g