MJ15004 PNP 20A 140V TO-3

roduct Category: Bipolar Transistors - BJT
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 140 V
Collector- Base Voltage VCBO: 140 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 20 A
Pd - Power Dissipation: 250 W
Gain Bandwidth Product fT: 2 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
Brand: Diodes Incorporated
DC Collector/Base Gain hFE Min: 25 at 5 A, 2 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si