MJ802 NPN 90V 30A 200W TO-3

Bipolar Transistors - BJT 30A 90V 200W NPN

Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS: N
Mounting Style: Through Hole
Package / Case: TO-204-2
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 90 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 30 A
Pd - Power Dissipation: 200 W
Gain Bandwidth Product fT: 2 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 8.51 mm
Length: 39.37 mm
Technology: Si
Width: 26.67 mm
Brand: ON Semiconductor
Continuous Collector Current: 30 A
DC Collector/Base Gain hfe Min: 25
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 100
Subcategory: Transistors
Unit Weight: 0.056438 oz