IRFP4668PbF MOS N 130A 200V 8mR 520W TO-247

MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 130 A
Rds On - Drain-Source Resistance: 9.7 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 161 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 520 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon / IR
Configuration: Single
Fall Time: 74 ns
Forward Transconductance - Min: 150 S
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Rise Time: 105 ns
400
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 64 ns
Typical Turn-On Delay Time: 41 ns
Width: 5.31 mm
Part # Aliases: IRFP4668PBF SP001572854
Unit Weight: 6 g