IRFPF50MOS N 6.7A 900V 1.6R 190W TO-247

Product Category: MOSFET
RoHS: No

RoHS Version Available

Brand: Vishay Semiconductors
Mounting Style: Through Hole
Package / Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 6.7 A
Rds On - Drain-Source Resistance: 1.6 Ohms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 37 ns
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 190 W
Rise Time: 34 ns
Factory Pack Quantity: 500
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 20 ns