MOSFET 200V P-CH HEXFET MOSFET
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247AC-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 44 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Series: IRFP
Transistor Type: 1 P-Channel
Brand: Vishay Semiconductors
Forward Transconductance - Min: 4.2 S
Fall Time: 38 ns
Product Type: MOSFET
Rise Time: 43 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 1.340411 oz
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247AC-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Rds On - Drain-Source Resistance: 500 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 44 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Series: IRFP
Transistor Type: 1 P-Channel
Brand: Vishay Semiconductors
Forward Transconductance - Min: 4.2 S
Fall Time: 38 ns
Product Type: MOSFET
Rise Time: 43 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 1.340411 oz