IRFP240 MOS N 200V 20A 0.18ohm 150WTO-247

MOSFET 200V N-CH HEXFET

Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 36 ns
Forward Transconductance - Min: 6.9 S
Product Type: MOSFET
Rise Time: 51 ns
Series: IRFP
500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 0.211644 oz