(Refurbished)
MOSFT 100V 180A 4.5mOhm 150nC Qg
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 180 A
Rds On - Drain-Source Resistance: 4.5 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 370 W
Channel Mode: Enhancement
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Fall Time: 88 ns
Product Type: MOSFET
Rise Time: 67 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 78 ns
Typical Turn-On Delay Time: 25 ns
MOSFT 100V 180A 4.5mOhm 150nC Qg
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 180 A
Rds On - Drain-Source Resistance: 4.5 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 370 W
Channel Mode: Enhancement
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Fall Time: 88 ns
Product Type: MOSFET
Rise Time: 67 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 78 ns
Typical Turn-On Delay Time: 25 ns