IRFBC40PBF MOS N 600V 6.2A 1.2R 125W TO-220

MOS N 600V 6.2A 1.2R 125W


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Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 6.2 A
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 60 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.49 mm
Length: 10.41 mm
Series: IRFBC
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: Vishay Semiconductors
Forward Transconductance - Min: 4.7 S
Fall Time: 20 ns
Product Type: MOSFET
Rise Time: 18 ns
Factory Pack Quantity: 50
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 13 ns
Unit Weight: 0.211644 oz