IRF650MOS N 200V 28A 85mR 156W TO-220

Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: N
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 85 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 156 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Transistor Type: 1 N-Channel
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Fall Time: 195 ns
Product Type: MOSFET
Rise Time: 240 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 295 ns
Typical Turn-On Delay Time: 30 ns
Unit Weight: 0.068784 oz