MOS_P_100V_23A_0.11ohm_94W_TO220
Type Designator: IRF9540N
Type of IRF9540N transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 140
Maximum drain-source voltage |Uds|, V: 100
Maximum gate-source voltage |Ugs|, V: 10
Maximum drain current |Id|, A: 23
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF9540N transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.117
Package: TO220AB
Type Designator: IRF9540N
Type of IRF9540N transistor: MOSFET
Type of control channel: P -Channel
Maximum power dissipation (Pd), W: 140
Maximum drain-source voltage |Uds|, V: 100
Maximum gate-source voltage |Ugs|, V: 10
Maximum drain current |Id|, A: 23
Maximum junction temperature (Tj), °C: 150
Rise Time of IRF9540N transistor (tr), nS:
Drain-source Capacitance (Cd), pF:
Maximum drain-source on-state resistance (Rds), Ohm: 0.117
Package: TO220AB