IRF9630MOS P 200V 6.5A 0.8ohm 74W TO-220

Type Designator: IRF9630

Type of IRF9630 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 700

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: TO220