IRF840 MOS N 500V 8A 0.75R 125W TO-220

N-CHANNEL 500V - 0.75 OHM - 8A -125W- TO-220

Type Designator: IRF840

Type of IRF840 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF840 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: TO220