IRF630 MOS N 200V 10A 40mR 74W TO-220

Type Designator: IRF630

Type of IRF630 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 74W

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220